1 power mosfet features ? ultra low gate charge ? reduced gate drive requirement ? enhanced 30 v, v gs ra ting ? reduced c iss , c os s , c rs s ? extremely high frequency operation ? repetitive avalanche rated ? compliant to rohs directive 2002/95/ec no tes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v , starting t j = 25 c, l = 25 mh, r g = 25 ? , i as = 6.2 a (see fig. 12). c. i sd ? 6.2 a , di/dt ? 80 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. pr oduct summary v ds (v) 600 r ds (on) ( ? )v gs = 10 v 1.2 q g (max.) (nc) 39 q gs (nc) 10 q gd (nc ) 19 configuration single n-channel mosfet g d s a vailable rohs* compliant absolute maxim um ratings (t c = 25 c, unless otherwise noted) para meter symbol limit unit drain-source voltage v ds 600 v gate-source v oltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 4 a t c = 100 c 2.9 pulsed drain current a i dm 25 linear derating factor 1.0 w/c single pulse avalanche energy b e as 530 mj repetitive avalanche current a i ar 6.2 a repetitive avalanche energy a e ar 13 mj maximum power dissipation t c = 25 c p d 125 w peak diode recovery dv/dt c dv/dt 3.0 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mou nting torque 6-32 or m3 screw 10 lbf in 1.1 n m * p b containing terminations are not rohs compliant, exemptions may apply d 5 1 / % 5 6 / www. daysemi.jp t o-220ab t op view gd s
2 not es a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. t hermal resistance ratings parameter symb ol typ. max. unit maximum junction-to-ambient r thj a -6 2 c/w case-to-sink, flat, greased surface r th cs 0.50 - maximum junction-to-case (drain) r th jc -1 . 0 specifi cations (t j = 25 c, unless otherwise noted) pa rameter symbol test cond itions min. typ. max. unit sta tic drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds te mperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma - 0.70 - v/c gate-source threshold voltage v gs (th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = ?? 20 - - 100 na zero gate voltage drain current i d ss v ds = 600 v , v gs = 0 v - - 100 a v ds = 480 v , v gs = 0 v, t j = 125 c - - 500 drain-source on-state resistance r ds (on) v gs = 10 v i d = 3.7 a b -- 1.2 ? forward transconductance g fs v ds = 100 v , i d = 3.7 a b 3.7 - - s dynam ic input capacitance c iss v gs = 0 v v ds = 25 v f = 1.0 mhz, see fig. 5 - 1100 - pf output capacitance c oss - 140 - reverse transfer capacitance c rss -1 5- total gate charge q g v gs = 10 v i d = 4 a, v ds = 360 v , see fig. 6 and 13 b -- 39 nc gate-source charge q gs -- 10 gate-drain charge q gd -- 19 turn-on delay time t d(on ) v dd = 300 v, i d = 4 a r g = 9.1 ? , r d = 47 ?? , see fig. 10 b -1 2- ns rise time t r -2 0- turn-off delay time t d(of f) -2 7- fall time t f -1 7- internal drain inductance l d b etween lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7 .5- d rain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol sh owing the integral reverse p - n junction diode --4.0 a pulsed diode forward current a i sm -- 25 body diode voltage v sd t j = 25 c, i s = 4 a, v gs = 0 v b -- 1.5v body diode reverse recovery time t rr t j = 25 c, i f = 4 a , di/dt = 100 a/s b - 440 680 ns body diode reverse recovery charge q rr -2 .13.2c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g d 5 1 / % 5 6 / www.daysemi.jp
3 t ypical characteristics (25 c, unless otherwise noted) fi g. 1 - typical output characteristics, t c = 2 5 c fig. 2 - typical output characteristics, t c = 15 0 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 91114_01 bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 25 c 4.5 v v ds , dr ain-to-source voltage (v) i d , dr ain current (a) 10 0 10 1 10 1 10 0 10 -1 10 -2 10 -2 10 -1 10 2 10 1 10 0 10 -1 10 0 10 1 v ds , dr ain-to-source voltage (v) i d , dr ain current (a) bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 150 c 91114_02 4.5 v 10 -2 10 -2 10 -1 10 2 20 s pulse width v ds = 100 v 10 1 10 0 10 -1 i d , dr ain current (a) v gs , gate-to-source voltage (v) 5678 910 4 25 c 150 c 91114_03 i d = 4 a v gs = 10 v 3.0 0.0 0.5 1.0 1.5 2.0 2.5 t j , j unction temperature (c) r ds(on) , dr ain-to-source on resistance (normalized) 91114_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 3.5 d 5 1 / % 5 6 / www.daysemi.jp
4 fi g. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 2400 2000 1600 1200 0 400 800 10 0 10 1 capacitance (pf) v ds , dr ain-to-source voltage (v) c iss c rss c oss v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shor ted c rss = c gd c oss = c ds + c gd 91114_05 q g , total gate charge (nc) v gs , gate-to-source voltage (v) 20 16 12 8 0 4 0 8 40 32 24 16 v ds = 180 v v ds = 240 v f or test circuit see figure 13 v ds = 300 v 91114_06 i d = 3.2 a 10 1 10 0 v sd , source-to-dr ain voltage (v) i sd , re verse drain current (a) 0.6 1.4 1.2 1.0 0.8 25 c 150 c v gs = 0 v 91114_07 10 s 100 s 1 ms 10 ms oper ation in this area limited by r ds(on) v ds , dr ain-to-source voltage (v) i d , dr ain current (a) t c = 25 c t j = 150 c single pulse 10 -2 10 3 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 10 2 25 10 3 25 10 4 91114_08 10 2 2 5 d 5 1 / % 5 6 / www.daysemi.jp
5 fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case i d , dr ain current (a) t c , case temperature (c) 0.0 2.5 3.0 3.5 4.0 5.0 25 150 125 100 75 50 91114_09 1.0 2.0 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 10 1 0.1 10 -2 10 -5 10 -4 10 -3 10 -2 0.1 1 10 p dm t 1 t 2 t 1 , rectangular pulse dur ation (s) ther mal response (z thjc ) notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (ther mal response) 0 ? 0.5 0.2 0.1 0.05 0.02 0.01 91114_11 d 5 1 / % 5 6 / www.daysemi.jp
6 fi g. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit r g i as 0. 01 t p d.u.t. l v ds + - v dd 10 v va r y t p to obtain required i as i as v ds v dd v ds t p 1200 0 200 400 600 800 1000 25 150 125 100 75 50 star ting t j , j unction temperature (c) e as , single pulse energy (mj) bottom to p i d 1.8 a 2.9 a 4 a v dd = 50 v 91114_12c q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + - d 5 1 / % 5 6 / www.daysemi.jp
1 to-220ab no tes * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471 package information
legal disclaimer notice www. daysemi.jp 1 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.daysemi.jp revision: 02-oct-12 1 document number: 72610 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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